DocumentCode
2427582
Title
Real-time monitoring of epitaxial growth
Author
Aspnes, D.E.
Author_Institution
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
fYear
2000
fDate
24-28 July 2000
Abstract
Optical probes not only provide information about microscopic mechanisms of epitaxy but have also been used for fully automatic sample-driven closed-loop feedback control of the growth of compositionally graded materials and structures.
Keywords
Chemical beam epitaxial growth; Ellipsometry; Feedback; MOCVD; Process control; Process monitoring; Reflectometry; Semiconductor growth; Vapor phase epitaxial growth; CBE; OMCVD; automatic sample-driven closed-loop feedback control; compositionally graded materials; deposition control; epitaxial growth; growth control; microscopic mechanisms; optical probes; real-time monitoring; spectroscopic ellipsometry; spectroscopic reflectometry; virtual interface theory; Epitaxial growth; Monitoring; Nonlinear optics; Optical feedback; Optical films; Optical harmonic generation; Optical sensors; Probes; Spectroscopy; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location
Aventura, FL, USA
ISSN
1099-4742
Print_ISBN
0-7803-6252-7
Type
conf
DOI
10.1109/LEOSST.2000.869716
Filename
869716
Link To Document