DocumentCode
2427621
Title
Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate
Author
Lu, Qianh ; Takeuchi, Hideki ; Lin, Ronald ; King, Tsu-Jae ; Hu, Chenming ; Onishi, Katsunori ; Choi, Rino ; Kang, Chang-Seok ; Lee, Jack C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
2002
fDate
2002
Firstpage
429
Lastpage
430
Abstract
The hot carrier reliability of n-channel MOSFETs with 11 Å EOT HfO2 gate dielectric and poly-Si gates was studied. Under peak ISUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO2 n-FETs are projected to have a 10-year lifetime at VD = 2.76 V.
Keywords
MOSFET; dielectric thin films; elemental semiconductors; hafnium compounds; hot carriers; semiconductor device reliability; semiconductor device testing; silicon; 0.15 micron; 10 year; 11 angstrom; 2.76 V; 20 C; HfO2 gate dielectric; HfO2-Si; SiO2; current stress conditions; device operating life; hafnium oxide; hot carrier reliability; n-FET channel length; n-MOSFET; n-channel MOSFET; poly-Si gate; polysilicon gate; projected device lifetime; room temperature operation; Annealing; Capacitance-voltage characteristics; Dielectric devices; Dielectric substrates; Hafnium oxide; Hot carriers; MOSFET circuits; Stress; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN
0-7803-7352-9
Type
conf
DOI
10.1109/RELPHY.2002.996680
Filename
996680
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