DocumentCode :
2427633
Title :
Application of pulse voltage for enhancing uniform nano-structured anodic aluminum oxide
Author :
Chung, C.K. ; Liu, T.Y. ; Chang, W.T.
Author_Institution :
Dept. of Mech. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2010
fDate :
20-23 Jan. 2010
Firstpage :
340
Lastpage :
343
Abstract :
Conventional anodic aluminum oxide (AAO) process was performed in low electrolytic temperature and high purity aluminum (Al) foil. In this article, pulse reverse voltage was applied to commercial purity (99%) and high purity (99.997%) Al foils at room temperature to form AAO. DC method was also used as a reference. The pulse AAO method provides advantages not only the reduced process complexity and at low cost but also better uniformity than that performed by DC one. The results show that pore uniformity can be improved by pulse reverse voltage in the 3h duration anodization compared to DC method. The pulse reverse voltage presents the high uniformity (77~78%) in both low and high purity Al. The effects on different Al purity and process durations will further discussed in this study.
Keywords :
alumina; aluminium; anodisation; foils; metallic thin films; nanofabrication; nanoporous materials; porosity; Al; Al2O3; DC method; anodization; commercial purity aluminum foil; high purity aluminum foil; low electrolytic temperature; pore uniformity; process complexity; process durations; pulse AAO method; pulse reverse voltage; temperature 293 K to 298 K; uniform nanostructured anodic aluminum oxide; AAO; Pulse voltage; Room temperature; Uniformity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
Type :
conf
DOI :
10.1109/NEMS.2010.5592234
Filename :
5592234
Link To Document :
بازگشت