Title :
Electrical characterization of copper penetration effects in silicon dioxide
Author :
Cluzel, Jacques ; Mondon, François ; Blachier, Deins ; Morand, Yves ; Martel, Laurent ; Reimbold, Gilles
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA/DRT, Grenoble, France
Abstract :
Understanding of electrical and physical copper behavior in dielectric materials is required for efficient analysis of copper contamination reliability issues. This work is based on temperature and bias-temperature stressing of copper-gate MOS capacitors, which allow both capacitance-voltage and leakage current analysis. Electrical results are consistent with SIMS analysis and provide a physical basis for studying interconnect reliability with respect to copper contamination.
Keywords :
MOS capacitors; capacitance; copper; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; leakage currents; secondary ion mass spectra; silicon compounds; surface contamination; thermal stresses; C-V characteristics; C-time characteristics; Cu-SiO2; SIMS analysis; bias-temperature stressing; capacitance-voltage analysis; copper behavior electrical characterization; copper contamination reliability analysis; copper interconnects; copper-gate MOS capacitors; dielectric materials; leakage current analysis; physical copper behavior; secondary ion mass spectroscopy; silicon dioxide copper penetration effects; temperature stressing; Annealing; Capacitance-voltage characteristics; Contamination; Copper; Current measurement; Leakage current; Silicon compounds; Stress; Temperature; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996681
