• DocumentCode
    2427697
  • Title

    A complete study of SILC effects on E2PROM reliability

  • Author

    Larcher, Luca ; Bertulu, Salvatore ; Pavan, Paolo

  • Author_Institution
    Modena Univ., Italy
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    437
  • Lastpage
    438
  • Abstract
    In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.
  • Keywords
    EPROM; integrated circuit reliability; leakage currents; E2PROM memory cell; MOS structure; SILC; reliability; Bars; Degradation; Leakage current; Nonvolatile memory; PROM; Physics; Random access memory; Temperature; Threshold voltage; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2002. 40th Annual
  • Print_ISBN
    0-7803-7352-9
  • Type

    conf

  • DOI
    10.1109/RELPHY.2002.996684
  • Filename
    996684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2427697