DocumentCode
2427891
Title
Film Bulk Acoustic-wave Resonator (FBAR) based infrared sensor
Author
Wang, Ziyu ; Qiu, Xiaotun ; Oiler, Jon ; Zhu, Jie ; Yu, Hongyu
Author_Institution
Sch. of Earth & Space Exploration, Arizona State Univ., Tempe, AZ, USA
fYear
2010
fDate
20-23 Jan. 2010
Firstpage
824
Lastpage
827
Abstract
This paper described an infrared (IR) radiation sensor based on Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency of FBAR sensor downshifts linearly when there is IR (peak wavelength at 780nm) illumination on the device. This effect attributed to the temperature sensitivity of the FBAR. The noise equivalent temperature difference (NETD) and the detection limit for 780 nm IR of the sensor is 25 mK at 25°C and 19 μW/mm2, respectively. This study has proven the feasibility of detection of IR using ZnO film based FBAR.
Keywords
III-V semiconductors; infrared detectors; surface acoustic wave resonators; temperature sensors; zinc compounds; ZnO; film bulk acoustic-wave resonator; infrared sensor; noise equivalent temperature difference; temperature 25 degC; temperature 25 mK; temperature sensitivity; wavelength 780 nm; Film bulk acoustic-wave resonator; frequency shift; infrared radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location
Xiamen
Print_ISBN
978-1-4244-6543-9
Type
conf
DOI
10.1109/NEMS.2010.5592244
Filename
5592244
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