DocumentCode :
2427973
Title :
Nanometer-scale flatness and reliability investigation of stress-compensated symmetrically-metallized monocrystalline-silicon multi-layer membranes
Author :
Sterner, Mikael ; Stemme, Göran ; Oberhammer, Joachim
Author_Institution :
Microsyst. Technol. Lab., KTH-R. Inst. of Technol., Stockholm, Sweden
fYear :
2010
fDate :
20-23 Jan. 2010
Firstpage :
959
Lastpage :
962
Abstract :
This paper demonstrates a very robust and fabrication-parameter insensitive concept of full stress compensation in metallized monocrystalline silicon membranes, by symmetrical metal deposition on both sides of a transfer-bonded silicon membrane, resulting in previously unmatched near-perfectly flat and high-reliability metal-coated membranes. Application examples are high-performance optical mirror devices and quasi-optical tuneable microwave surfaces. The influence of the thickness ratio between the metal films on the two membrane sides are investigated, demonstrating a controllable curvature range from -0.3 mm-1 to 0.1 mm-1 by varying the top to bottom metal thickness ratio from 0.38 to 3.5, using metal thicknesses from 200 nm to 800 nm, and achieving near-zero curvature down to 0.004 mm-1. Extensive reliability tests, up to 100 million cycles, showed no detectable change in curvature, no plastic deformation and good repeatability in analog-mode deflection (within 2.5 %), proving the robustness of this concept of metallized monocrystalline membranes.
Keywords :
coating techniques; membranes; metalworking; plastic deformation; stress effects; analog-mode deflection; full stress compensation; metallized monocrystalline membrane concept; monocrystalline-silicon multilayer membranes; nanometer-scale flatness; reliability tests; stress-compensated multilayer membranes; symmetrical metal deposition; symmetrically-metallized multilayer membranes; transfer-bonded silicon membrane;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
Type :
conf
DOI :
10.1109/NEMS.2010.5592249
Filename :
5592249
Link To Document :
بازگشت