DocumentCode :
2428142
Title :
Test generation and fault modeling for stress testing
Author :
Aitken, Robert C.
fYear :
2002
fDate :
2002
Firstpage :
95
Lastpage :
99
Abstract :
Voltage stress testing has long been used as a reliability screen. Significant effort has been devoted in the reliability physics literature to setting of stress voltages. Chang and McCluskey formalized the test aspects of voltage stressing in their works on "SHOVE (SHort VOltage Elevation)" testing. Their work deals with 3.3V and 5V technologies where Fowler-Nordheim tunneling is dominant and suggests a stress energy of about 6MV/cm. In current generation technologies, Fowler-Nordheim tunneling is replaced by standard tunneling currents and operating energies are in the suggested stress range (e.g. 1.2V power supply with a 20Å oxide is 6MV/cm). Modified methods are developed to support this new situation, and a rest generation technique is introduced that enables substantial reduction in the number of stress vectors.
Keywords :
fault simulation; integrated circuit reliability; integrated circuit testing; life testing; tunnelling; 1.2 V; 20 angstrom; Fowler-Nordheim tunneling; SHOVE; fault modeling; operating energies; power supply; reliability screen; short voltage elevation; stress energy; stress testing; stress vectors; stress voltages; test generation; test generation technique; voltage stress testing; Acceleration; DH-HEMTs; Equations; Physics; Power generation; Stress; Temperature; Testing; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2002. Proceedings. International Symposium on
Print_ISBN :
0-7695-1561-4
Type :
conf
DOI :
10.1109/ISQED.2002.996704
Filename :
996704
Link To Document :
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