• DocumentCode
    2428142
  • Title

    Test generation and fault modeling for stress testing

  • Author

    Aitken, Robert C.

  • fYear
    2002
  • fDate
    2002
  • Firstpage
    95
  • Lastpage
    99
  • Abstract
    Voltage stress testing has long been used as a reliability screen. Significant effort has been devoted in the reliability physics literature to setting of stress voltages. Chang and McCluskey formalized the test aspects of voltage stressing in their works on "SHOVE (SHort VOltage Elevation)" testing. Their work deals with 3.3V and 5V technologies where Fowler-Nordheim tunneling is dominant and suggests a stress energy of about 6MV/cm. In current generation technologies, Fowler-Nordheim tunneling is replaced by standard tunneling currents and operating energies are in the suggested stress range (e.g. 1.2V power supply with a 20Å oxide is 6MV/cm). Modified methods are developed to support this new situation, and a rest generation technique is introduced that enables substantial reduction in the number of stress vectors.
  • Keywords
    fault simulation; integrated circuit reliability; integrated circuit testing; life testing; tunnelling; 1.2 V; 20 angstrom; Fowler-Nordheim tunneling; SHOVE; fault modeling; operating energies; power supply; reliability screen; short voltage elevation; stress energy; stress testing; stress vectors; stress voltages; test generation; test generation technique; voltage stress testing; Acceleration; DH-HEMTs; Equations; Physics; Power generation; Stress; Temperature; Testing; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2002. Proceedings. International Symposium on
  • Print_ISBN
    0-7695-1561-4
  • Type

    conf

  • DOI
    10.1109/ISQED.2002.996704
  • Filename
    996704