Temperature-dependence electrical performance of GaAs-based HEMT-embedded accelerometer

In this paper, it is researched that how I-V characteristics and piezoresistance coefficient of GaAs-based HEMT-embedded accelerometer change when different temperatures are set. It is shown that saturation current of device would go down if the temperature goes up, which is about 3.1467mA/°C, based on the research. However, the device can work well at the temperature range of -50°Cto 50°C, which indicates that it can work safely in the larger temperature range. Piezoresistance coefficient is also in down trend with the temperature rising, that it, it has negative temperature coefficient which is about 0.74%/°C, and it´s sensitivity is higher than Si.