DocumentCode :
2428834
Title :
Combined Lateral Vertical RESURF (CLAVER) LDMOS structure
Author :
Khan, Tahir ; Khemka, Vishnu ; Zhu, Ronghua ; Huang, Weixiao ; Cheng, Xu ; Hui, Paul ; Ger, Muh-ling ; Grote, Bernard ; Rodriquez, Pete
Author_Institution :
Freescale Semicond., Tempe, AZ, USA
fYear :
2009
fDate :
14-18 June 2009
Firstpage :
13
Lastpage :
16
Abstract :
In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade-off. The proposed device uses standard process steps available in integrated technology platforms to give a breakdown as high as 150 V with ground-breaking on-state resistance of 159 mOhm-mm2.
Keywords :
MIS devices; power integrated circuits; combined lateral vertical RESURF LDMOS; integrated smartpower technology; voltage 150 V; Automotive engineering; Costs; Electric breakdown; Immune system; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
ISSN :
1943-653X
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2009.5157989
Filename :
5157989
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2428834
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