Title :
Improvement of MC Si solar cells by Al-gettering and hydrogen passivation
Author :
Hahn, Giso ; Fath, Peter ; Bucher, E.
Author_Institution :
Fakultat fur Phys., Konstanz Univ.
fDate :
29 Sep-3 Oct 1997
Abstract :
Systematic Al-gettering and MIRHP (microwave induced remote hydrogen plasma) passivation studies have been carried out on various ribbon (EFG, Bayer RGS) and multicrystalline (mc) Si materials (Baysix, Eurosil, Solarex, EMC) with initial minority carrier diffusion lengths varying from <30-300 μm. Gettering was investigated between 700-1050°C. Solar cells with optimized Al-gettering conditions including a selective emitter structure were characterized before and after MIRHP passivation in order to separate the benefits of gettering and hydrogen passivation. We could achieve improvements for most materials by Al-gettering and an increase in all cell parameters for all materials by MIRHP passivation, with an increase in efficiency for the ribbon Si materials of up to 30% relative
Keywords :
aluminium; carrier lifetime; elemental semiconductors; getters; hydrogen; minority carriers; passivation; silicon; solar cells; 30 to 300 mum; 700 to 1050 C; Al; Al-gettering; H2; Si; Si solar cells; hydrogen passivation; microwave induced remote hydrogen plasma; minority carrier diffusion lengths; multicrystalline Si materials; ribbon Si materials; selective emitter structure; Costs; Crystalline materials; Electromagnetic compatibility; Gettering; Hydrogen; Manufacturing processes; Passivation; Photovoltaic cells; Production; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653928
