Title :
Characterization and optimization of the Al/SiOx/p-Si MIS contact in MIS-IL silicon solar cells
Author :
Kuhlmann, Burkhard ; Aberle, Armin G. ; Hezel, Rudolf ; Heiser, Gernot
Author_Institution :
Inst. fur Solarenergieforschung Hameln, Emmerthal, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
The Al/SiOx/p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. We experimentally determined the recombination properties (saturation current density J0 and ideality factor n) of the MIS contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined
Keywords :
MIS devices; aluminium; current density; electrical contacts; electron-hole recombination; elemental semiconductors; inversion layers; silicon; silicon compounds; solar cells; 1-sun illumination; 2D numerical modeling; 2D numerical optimization; Al-SiO-Si; Al/SiOx/p-Si MIS tunnel contact; MIS contact fingers; MIS-IL silicon solar cells; Si; ideality factor; inversion layer Si solar cells; metal-insulator-semiconductor; recombination losses; recombination properties; saturation current density; Annealing; Artificial intelligence; Current density; Loss measurement; Metal-insulator structures; Numerical models; Photovoltaic cells; Radiative recombination; Semiconductor films; Silicon compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653929
