DocumentCode :
2428926
Title :
730V, 34mΩ-cm2 lateral epilayer RESURF GaN MOSFET
Author :
Huang, W. ; Chow, T.P. ; Niiyama, Y. ; Nomura, T. ; Yoshida, S.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2009
fDate :
14-18 June 2009
Firstpage :
29
Lastpage :
32
Abstract :
We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good trade-off between breakdown voltage and specific on-resistance for the first time. Device with 4 mum channel length and 16 mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmega-cm2 (VG-VT=20 V).
Keywords :
III-V semiconductors; MOSFET; gallium compounds; semiconductor device breakdown; semiconductor epitaxial layers; wide band gap semiconductors; GaN; MOSFET; breakdown voltage; lateral epilayer RESURF; n-channel GaN epilayer; size 16 mum; size 4 mum; specific on-resistance; voltage 730 V; Electron mobility; Epitaxial layers; Etching; Fabrication; Gallium nitride; Implants; MOSFET circuits; Research and development; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
ISSN :
1943-653X
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2009.5157993
Filename :
5157993
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2428926
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