Title :
Microstructural analysis of the crystallization of silicon ribbons produced by the RGS process
Author :
Steinbach, I. ; Hofs, H.-U.
Author_Institution :
ACCESS e.V., Aachen, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
The microstructural evolution of multicrystalline silicon ribbons produced by the RGS process (ribbon growth on substrate) is analysed by numerical simulation. The crystallization model takes into account the facetted growth structure of silicon, thermal supercooling in front of the crystallization front and nucleation dependent on the thermal supercooling. The thermal conditions for the crystallization of the ribbon are taken from a macroscopic finite element simulation of the RGS process, as it is realized at Bayer AG, Germany. Different crystallization morphologies-single crystal, columnar multicrystal or dendritic-are discussed in their dependence on the process and nucleation conditions. The numerical results are compared to morphologies of silicon ribbons, grown on the pilot plant of Bayer AG, Germany
Keywords :
crystal growth from melt; crystal microstructure; crystallisation; elemental semiconductors; nucleation; semiconductor growth; silicon; solar cells; supercooling; RGS process; Si; Si ribbons; columnar multicrystal; crystallization; crystallization morphologies; dendritic crystal; facetted growth structure; macroscopic finite element simulation; microstructural analysis; nucleation; numerical simulation; ribbon growth on substrate; single crystal; solar cell applications; thermal supercooling; Cooling; Costs; Crystalline materials; Crystallization; Equations; Production; Sheet materials; Silicon; Surface morphology; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653932