Title :
A novel driving technology for a passive gate on a Lateral-IGBT
Author :
Terashima, Tomohide
Author_Institution :
Power Semicond. Device Dev. Dept., Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
This paper presents a novel technology for automatic driving of the passive PMOS to improve a Lateral-IGBT switching performance. Though the former technology, which we had introduced, has very simple driving circuitry, it still needs some additional process or structural change. The novel technology eliminates these remained problems without decrease in device performance. Simulation results indicate advantage of the novel technology in total performance compared with results of the former technology. Besides, experimental results of the prototype IPD with the novel technology have indicated improved switching performance distinctly.
Keywords :
insulated gate bipolar transistors; switching; driving technology; lateral IGBT; passive PMOS; passive gate; prototype IPD; switching performance; Bonding; Circuit simulation; Electrodes; Insulated gate bipolar transistors; Paper technology; Power semiconductor devices; Power semiconductor switches; Prototypes; Virtual colonoscopy; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5157997
