A novel driving technology for a passive gate on a Lateral-IGBT

Author

Terashima, Tomohide

Author_Institution

Power Semicond. Device Dev. Dept., Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

2009

fDate

14-18 June 2009

Firstpage

45

Lastpage

48

Abstract

This paper presents a novel technology for automatic driving of the passive PMOS to improve a Lateral-IGBT switching performance. Though the former technology, which we had introduced, has very simple driving circuitry, it still needs some additional process or structural change. The novel technology eliminates these remained problems without decrease in device performance. Simulation results indicate advantage of the novel technology in total performance compared with results of the former technology. Besides, experimental results of the prototype IPD with the novel technology have indicated improved switching performance distinctly.

Keywords

insulated gate bipolar transistors; switching; driving technology; lateral IGBT; passive PMOS; passive gate; prototype IPD; switching performance; Bonding; Circuit simulation; Electrodes; Insulated gate bipolar transistors; Paper technology; Power semiconductor devices; Power semiconductor switches; Prototypes; Virtual colonoscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5157997

Filename

5157997