DocumentCode
2429027
Title
Growth and characterization of 200 kG multicrystalline silicon ingots by HEM
Author
Khattak, Chandra P. ; Schmid, Frederick
Author_Institution
Crystal Syst. Inc., Salem, MA, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
111
Lastpage
114
Abstract
Fully-automated Heat Exchanger Method (HEM)TM furnaces have been used to produce 58-cm square cross section, 200 kg multicrystalline silicon ingots with high uniformity in properties throughout the ingots. This processing combined with the upgrading potential of HEM will result in large-scale production at low cost
Keywords
crystal growth from melt; elemental semiconductors; furnaces; heat exchangers; industrial control; semiconductor growth; silicon; 200 kg; Heat Exchanger Method furnaces; Si; automated control; large-scale production; low cost production; multicrystalline Si growth; multicrystalline silicon ingots growth; square ingots; Costs; Crystallization; Furnaces; Grain boundaries; Large-scale systems; Photovoltaic systems; Production; Silicon; Solar power generation; Temperature control;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.653937
Filename
653937
Link To Document