Low-loss rectifier by self-driven MOSFET with gate drive voltage control circuit

Author

Kagawa, Y. ; Furukawa, A. ; Takeshita, M. ; Iwata, A. ; Suga, I. ; Yamakawa, S. ; Inoue, M.

Author_Institution

Mitsubishi Electr. Corp., Amagasaki, Japan

fYear

2009

fDate

14-18 June 2009

Firstpage

69

Lastpage

72

Abstract

The low-loss self-driven rectifier we developed requires no external power supply and uses a novel CMOS control circuit that generates the power MOSFET drive signal by boosting the intrinsic body diode voltage drop. The rectifier significantly improved conduction loss - a 47% decrease from intrinsic-body-diode-based conduction loss - during half-wave rectification. It can replace with a common diode for a rectifier.

Keywords

CMOS integrated circuits; MOSFET circuits; power MOSFET; solid-state rectifiers; voltage control; CMOS control circuit; conduction loss; diode voltage drop; gate drive voltage control circuit; half-wave rectification; intrinsic body diode voltage drop; low-loss rectifier; power MOSFET; self-driven MOSFET; Charge pumps; Circuit simulation; Diodes; MOSFET circuits; Power MOSFET; Power generation; Power supplies; Rectifiers; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158003

Filename

5158003