Title :
Bipolar Schottky rectifier: A novel two carrier Schottky rectifier based on superjunction concept
Author :
Khemka, Vishnu ; Zhu, Ronghua ; Khan, Tahir ; Huang, Weixiao ; Fu, Yue ; Xu, Cheng ; Hui, Paul ; Ger, Muh-ling ; Rodriquez, Pete
Author_Institution :
Analog & Mixed Signal Technol., Freescale Semicond., Inc., Tempe, AZ, USA
Abstract :
In this paper, a novel Schottky diode structure based on the superjunction concept is proposed. The concept is based on 2-carrier current conduction and utilizes both P and N columns for current conduction. The proposed device utilized the P and N superjunction columns to achieve high breakdown with low leakage current.
Keywords :
Schottky diodes; electric breakdown; electrical conductivity; leakage currents; solid-state rectifiers; 2-carrier current conduction; Schottky diode structure; bipolar Schottky rectifier; breakdown; leakage current; superjunction; Breakdown voltage; Clamps; Electric breakdown; Leakage current; Metalworking machines; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor materials; Silicon;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158009
