Impact of the drift region profile on performance and reliability of RF-LDMOS transistors

In this paper, we study the influence of the doping profile in the drift region on performance and reliability of RF-NLDMOS transistors in a 0.13 mum SiGe-BiCMOS technology. Two different drift region designs were investigated by simulation and experiment. We show that the design with a shallow compensation implant delivers a significantly improved HCI robustness at a similar level of RF and DC performance. The presented modular integration concept offers NLDMOS devices with breakdown-voltages BV_DSS=21 V and peak cut-off frequencies f_T=23 GHz. The maximum operating voltage for less than 10% degradation of the on-resistance in ten years is 11 V.