Impact of the drift region profile on performance and reliability of RF-LDMOS transistors

Author

Mai, A. ; Rücker, H. ; Sorge, R.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2009

fDate

14-18 June 2009

Firstpage

100

Lastpage

103

Abstract

In this paper, we study the influence of the doping profile in the drift region on performance and reliability of RF-NLDMOS transistors in a 0.13 mum SiGe-BiCMOS technology. Two different drift region designs were investigated by simulation and experiment. We show that the design with a shallow compensation implant delivers a significantly improved HCI robustness at a similar level of RF and DC performance. The presented modular integration concept offers NLDMOS devices with breakdown-voltages BV_DSS=21 V and peak cut-off frequencies f_T=23 GHz. The maximum operating voltage for less than 10% degradation of the on-resistance in ten years is 11 V.

Keywords

BiCMOS integrated circuits; MOSFET; microwave transistors; semiconductor device reliability; HCI robustness; NLDMOS devices; RF-LDMOS transistors; SiGe; SiGe-BiCMOS technology; doping profile; drift region profile; performance; reliability; shallow compensation implant; size 0.13 mum; BiCMOS integrated circuits; Cutoff frequency; Degradation; Doping profiles; Electronic mail; Human computer interaction; Implants; Radio frequency; Stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158011

Filename

5158011