Penetrating microelectrode arrays with low-impedance sputtered iridium oxide electrode coatings

Sputtered iridium oxide (SIROF) is a candidate low-impedance coating for neural stimulation and recording electrodes. SIROF on planar substrates has exhibited a high charge-injection capacity and impedance suitable for indwelling cortical microelectrode applications. In the present work, the properties of SIROF electrode coatings deposited onto multi-shank penetrating arrays intended for intracortical and intraneural applications were examined. The charge-injection properties under constant current pulsing were evaluated for a range of pulsewidths and current densities using voltage transients to determine maximum potential excursions in an inorganic model of interstitial fluid at 37degC. The charge-injection capacity of the SIROFs was significantly improved by the use of positive potential biasing in the interpulse period, but even without bias, the SIROFs reversibly inject higher charge than other iridium oxides or platinum. Typical deliverable charge levels of 25 to 160 nC/phase were obtained with 2000 mum² electrodes depending on pulsewidth and interpulse bias. Similar sized platinum electrodes could inject 3 to 8 nC/phase.