• DocumentCode
    2429504
  • Title

    600V trench-gate IGBT with Micro-P structure

  • Author

    Nakano, H. ; Onozawa, Y. ; Kawano, R. ; Yamazaki, T. ; Seki, Y.

  • Author_Institution
    Fuji Electr. Device Technol. Co., Ltd., Nagano, Japan
  • fYear
    2009
  • fDate
    14-18 June 2009
  • Firstpage
    132
  • Lastpage
    135
  • Abstract
    This paper describes the next generation 600 V trench-gate IGBT utilizing the Micro-P structure to realize low noise and low power dissipation. We have achieved ldquobetter turn-on di/dt controllabilityrdquo, ldquooscillation free turn-offrdquo and ldquoimproved Von-Eoff trade-off relationshiprdquo in the 600 V IGBTs. In a typical inverter operation, the new chip has realized 10% lower power dissipation and the dTj-c can be reduced by 2.5 deg.C.
  • Keywords
    insulated gate bipolar transistors; oscillations; inverter operation; low noise; low power dissipation; microP structure; on-Eoff trade-off relationship; oscillation free turn-off; trench-gate IGBT; urn-on di/dt controllability; voltage 600 V; Automobiles; Controllability; Electromagnetic interference; Electronic mail; Insulated gate bipolar transistors; Inverters; Noise generators; Noise reduction; Power dissipation; Voltage; EMI noise; Floating p-base layer; Turn-off oscillation; Turn-on di/dt controllability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
  • Conference_Location
    Barcelona
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-3525-8
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2009.5158019
  • Filename
    5158019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2429504