Title :
600V trench-gate IGBT with Micro-P structure
Author :
Nakano, H. ; Onozawa, Y. ; Kawano, R. ; Yamazaki, T. ; Seki, Y.
Author_Institution :
Fuji Electr. Device Technol. Co., Ltd., Nagano, Japan
Abstract :
This paper describes the next generation 600 V trench-gate IGBT utilizing the Micro-P structure to realize low noise and low power dissipation. We have achieved ldquobetter turn-on di/dt controllabilityrdquo, ldquooscillation free turn-offrdquo and ldquoimproved Von-Eoff trade-off relationshiprdquo in the 600 V IGBTs. In a typical inverter operation, the new chip has realized 10% lower power dissipation and the dTj-c can be reduced by 2.5 deg.C.
Keywords :
insulated gate bipolar transistors; oscillations; inverter operation; low noise; low power dissipation; microP structure; on-Eoff trade-off relationship; oscillation free turn-off; trench-gate IGBT; urn-on di/dt controllability; voltage 600 V; Automobiles; Controllability; Electromagnetic interference; Electronic mail; Insulated gate bipolar transistors; Inverters; Noise generators; Noise reduction; Power dissipation; Voltage; EMI noise; Floating p-base layer; Turn-off oscillation; Turn-on di/dt controllability;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158019
