Title :
A chip design concept for an extremely low on-state voltage 1200V FS-IGBT/FWD with high withstand capability for the MERS configuration
Author :
Iwamuro, Noriyuki ; Yamazaki, Tomoyuki ; Shiigi, Takashi ; Shimada, Ryuichi
Author_Institution :
Electron Device Lab., Fuji Electr. Device Technol. Co., Ltd., Nagano, Japan
Abstract :
This paper describes IGBT and FWD design concept and measured results for the application of magnetic energy recovery switch (MERS) configuration for the first time. Since the switching frequency in the MERS application is so slow of 50-60 Hz that a lower on-state voltage drop is strongly required for the IGBT and FWD chips even though their fast switching features are sacrificed. Therefor e, the newly developed IGBT and FWD chip for this configuration exhibits an extreme low on-state voltage drop while maintaining its turn-off withstand capability.
Keywords :
insulated gate bipolar transistors; integrated circuit design; frequency 50 Hz to 60 Hz; high voltage power semiconductor devices; insulated gate bipolar transistor; magnetic energy recovery switch; switching frequency; Chip scale packaging; Low voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158026
