The 3.3kV Semi-SuperJunction IGBT for increased cosmic ray induced breakdown immunity

In this paper we propose and describe a new device, the 3.3 kV semi-superjunction insulated gate bipolar transistor (Semi SJ IGBT). The device offers significant improvement in the on-state and switching trade-off compared to both state-of the-art field stop (FS) trench IGBT and the Full SJ IGBT; There is no need for very deep pillars, therefore the ease of manufacturing is improved as the device can be based on the dasiapresentpsila CoolMOS type technology for formation of n & p pillars for 600-1 kV. This makes the device a potential winner for the 3.3 kV or even greater voltage ranges (e.g. 6.5 kV). Furthermore the device offers considerably better robustness against cosmic rays when compared to a conventional FS IGBT. Here we demonstrate via analytical modeling that the FIT (Failure in Time) levels can be improved by one to two orders of magnitude.