DocumentCode
2429778
Title
Radiation-stable solid state devices based on intrinsic semiconductors
Author
Gurevich, Yuri G. ; Volovichev, Igor N. ; Koshkin, Vladimir M.
Author_Institution
Dept. de Fisica, CINVESTAV-IPN, Mexico City, Mexico
fYear
2000
fDate
2000
Abstract
The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of solid state devices is discussed. The theoretical possibility of creation of active electronic elements based on semiconductors of this type is shown. A feasible implementation of the solid-state amplifier on the basis of thin-film heterostructures of intrinsic semiconductors is suggested and its parameters are calculated
Keywords
III-VI semiconductors; carrier mobility; electrical conductivity; indium compounds; radiation hardening (electronics); semiconductor thin films; vacancies (crystal); In2Te3; active electronic elements; intrinsic semiconductors; loose crystal structures; radiation-stable solid state devices; thin-film heterostructures; Conductivity; Gallium arsenide; Ionizing radiation; Lattices; Optical scattering; Particle scattering; Semiconductor impurities; Semiconductor materials; Solid state circuits; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location
Cancun
Print_ISBN
0-7803-5766-3
Type
conf
DOI
10.1109/ICCDCS.2000.869827
Filename
869827
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