Title :
A new junction termination technique: The Deep Trench Termination (DT2)
Author :
Théolier, L. ; Mahfoz-Kotb, H. ; Isoird, K. ; Morancho, F.
Author_Institution :
LAAS, CNRS, Toulouse, France
Abstract :
Numerous techniques have been used to improve the voltage handling capability of high voltage power devices with the aim to obtain the breakdown of a plane junction. In this work, a new concept of low cost, low surface and high efficiency junction termination for power devices is presented and experimentally validated. This termination is based on a large and deep trench filled by BCB (BenzoCycloButene) associated to a field plate. Simulation results show the important impact of trench design and field plate width on termination performances. The experimental breakdown voltage of this Deep Trench Termination (DT2) is close to 1300 Volts: this value validates not only the concept of the DT2 but also the choice of the BCB as a good dielectric material for this termination.
Keywords :
dielectric materials; electrostatics; leakage currents; organic compounds; p-n junctions; power semiconductor diodes; semiconductor device breakdown; BCB; PN diode; benzocyclobutene; breakdown voltage; deep trench termination; electrostatic potential distribution; junction termination technique; leakage current; power devices; spin-on dielectrics; Breakdown voltage; Costs; Dielectric thin films; Electric breakdown; Electrostatics; Etching; Indium phosphide; Silicon; Termination of employment; Uninterruptible power systems;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158030
