Title :
A new model for aluminum interconnect fusing caused by ESD
Author :
Vinson, J.E. ; Liou, J.J.
Author_Institution :
Harris Corp., Melbourne, FL, USA
Abstract :
Electrical Overstress (EOS) in semiconductor devices accounts for a large number of the failures that occur in both the vendor´s facility as well as in the field. Improvements in the circuit design and layout require techniques that accurately model this damage. This paper provides the details necessary to model fusing of aluminum interconnect caused by electrostatic discharge. It also highlights the important material properties necessary to improve a circuit´s response to EOS or ESD events
Keywords :
aluminium; electrostatic discharge; integrated circuit interconnections; Al; aluminum interconnect; electrical overstress; electrostatic discharge; fusing model; semiconductor device; Aluminum; Bonding; Earth Observing System; Electromigration; Electrostatic discharge; Integrated circuit interconnections; Semiconductor device packaging; Semiconductor devices; Temperature; Wire;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869829
