Title :
A dynamic threshold-voltage SOI MOSFET with a stepped channel doping profile
Author :
Xu, Jun ; Cheng, Ming-C
Author_Institution :
Dept. of Comput. Sci., New Orleans Univ., LA, USA
Abstract :
A novel dynamic threshold voltage SOI MOS structure with a stepped-channel-doping (SCD) profile is proposed. The influence of the SCD profile on performance of deep-submicron dynamic threshold SOI MOSFET´s is studied systematically using two-dimensional device simulation. It is discovered that the SCD configuration combined with the dynamic threshold SOI MOS structure not only effectively suppresses short-channel effects, but also greatly enhances the device driving capability. Moreover, the heavily doped body in the SCD device substantially reduces the forward-biased body current and source-drain punch-through current
Keywords :
MOSFET; doping profiles; semiconductor device models; silicon-on-insulator; 2D device simulation; SCE suppression; deep-submicron MOSFET; device driving capability enhancement; dynamic threshold-voltage SOI MOSFET; forward-biased body current reduction; short-channel effects suppression; source-drain punch-through current reduction; stepped channel doping profile; Computer science; Degradation; Doping profiles; Leakage current; Low voltage; MOS devices; MOSFET circuits; Power integrated circuits; Threshold voltage; User centered design;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869834
