Hydrodynamic simulation of MESFET´s using the least-squares finite element method

Author

Shen, Min ; Cheng, Ming-C

Author_Institution

Adv. Mater. Res. Inst., New Orleans Univ., LA, USA

fYear

2000

fDate

2000

Abstract

A least-squares finite element method is developed for the 2D hydrodynamic simulation of semiconductor devices. The hydrodynamic device equations coupled with the Poisson equation are formulated as one unified equation system in this least squares finite element scheme. The developed method is applied to simulation of a 2D MESFET with a 0.2 μm gate to demonstrate its capability of handling the large gradients of variables and discontinuities of the boundary conditions

Keywords

Poisson equation; Schottky gate field effect transistors; finite element analysis; least squares approximations; semiconductor device models; 0.2 micron; 2D hydrodynamic simulation; MESFET; Poisson equation; boundary conditions; finite element method; hydrodynamic device equations; least-squares FEM; semiconductor device; unified equation system; Computational modeling; Finite difference methods; Finite element methods; Hot carrier effects; Hydrodynamics; Least squares methods; MESFETs; Navier-Stokes equations; Poisson equations; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on

Conference_Location

Cancun

Print_ISBN

0-7803-5766-3

Type

conf

DOI

10.1109/ICCDCS.2000.869835

Filename

869835