Title :
Role of N2 ion implantation dose on hot carrier lifetime in deep submicron NMOS devices
Author :
Guarin, Fernando J. ; Rauch, S.E. ; La Rosa, Giuseppe ; Brelsford, Kevin
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
The impact of N2 ion implantation (I/I) dose before gate oxide growth on Hot Carrier (HC) reliability of NMOSFETs is reported here. Improvements ranging from 20 to 30 times in HC lifetime were achieved by the introduction of sufficiently high N2 (I/I) doses. It was found that for NMOSFET´s the HC degradation correlates inversely to the initial interface state density introduced by the N2 I/I process. We believe that the increased initial interface state density and the reduced hot carrier degradation both stem from the reduced hydrogen concentration at the Si-SiO2 interface with increasing N2 dose
Keywords :
MOSFET; carrier lifetime; hot carriers; interface states; ion implantation; nitrogen; semiconductor device reliability; semiconductor-insulator boundaries; 0.18 micron; H concentration reduction; N2; N2 ion implantation dose; NMOSFETs; Si-SiO2; Si-SiO2 interface; deep submicron NMOS devices; drain current degradation; hot carrier degradation reduction; hot carrier lifetime; hot carrier reliability; initial interface state density; pre-gate oxide growth; Acceleration; CMOS technology; Degradation; Hot carriers; Interface states; Ion implantation; MOS devices; MOSFETs; Oxidation; Stress;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869837
