Title :
The subthreshold-to-linear transition in submicron MOSFETs at high temperature
Author :
Gutierrez-D, E.A. ; Murphy, R.
Author_Institution :
INAOE, Puebla, Mexico
Abstract :
The operation and modelling of submicron MOSFETs in the subthreshold-to-linear transition region is becoming a crucial issue, especially for deep-submicron or nanodevices that need to be operated at a low-voltages to reduce hot-carrier effects and degradation. The impact of high-temperature (200 C) operation in this transition region is discussed in this work
Keywords :
MOSFET; high-temperature electronics; hot carriers; semiconductor device models; 200 C; high temperature operation; hot-carrier effects; low-voltage operation; modelling; submicron MOSFETs; subthreshold-to-linear transition; CMOS technology; Degradation; Doping; Electrons; Hot carrier effects; Hot carriers; MOSFET circuits; Temperature dependence; Threshold voltage; Virtual manufacturing;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869839
