Title :
Impact of doping concentration and temperature variation on the noise performance of separate gate InAlAs/InGaAs DG-HEMT
Author :
Parveen ; Verma, Naveen ; Jogi, Jyotika
Author_Institution :
South Campus, A.R.S.D. Coll. , Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
Impact of donor-layer doping concentration and temperature variation on the various noise coefficients and minimum noise figure is investigated for separate gate InAlAs/InGaAs DG-HEMT, in this paper. The noise coefficients, which include the drain noise coefficient (P), gate noise coefficient (R), the correlation coefficient (C) and the minimum noise figure have been evaluated using Pucel´s charge control based approach. The behavior of P, R, C noise coefficients and the minimum noise figure with doping concentration and temperature variation predict their influence on the overall noise performance of the device.
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; semiconductor doping; InAlAs-InGaAs; Pucel charge control based approach; correlation coefficient; donor-layer doping concentration; drain noise coefficient; gate noise coefficient; noise figure; separate gate DG-HEMT; temperature variation; Doping; Indium gallium arsenide; Logic gates; Noise; Noise figure; Performance evaluation; Double-gate HEMT; InAlAs/InGaAs; Noise; Separate-gate;
Conference_Titel :
TENCON 2014 - 2014 IEEE Region 10 Conference
Conference_Location :
Bangkok
Print_ISBN :
978-1-4799-4076-9
DOI :
10.1109/TENCON.2014.7022339
