Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs

Author

Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis

Author_Institution

Escola Politecnica, Sao Paulo Univ., Brazil

fYear

2000

fDate

2000

Abstract

In this work the parasitic bipolar effects are studied and compared in conventional and graded-channel fully-depleted SOI nMOSFETs by means of both two-dimensional simulation and experiments. The multiplication factor and parasitic bipolar gain, which are the parameters responsible for the parasitic BJT action, are investigated separately. Breakdown voltage, abnormal subthreshold slope and hysteresis are also investigated. The graded-channel device efficiently alleviates the parasitic BST activation, improving the breakdown voltage

Keywords

MOSFET; hysteresis; impact ionisation; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 2D simulation; Si; abnormal subthreshold slope; breakdown voltage; conventional SOI nMOSFETs; floating-body effects; fully-depleted SOI nMOSFETs; graded-channel SOI nMOSFETs; hysteresis; impact ionisation reduction; multiplication factor; n-MOSFET; n-channel MOSFET; parasitic BJT action; parasitic bipolar effects; parasitic bipolar gain; two-dimensional simulation; Analog-digital conversion; Breakdown voltage; Degradation; Doping; Hysteresis; Impact ionization; MOSFET circuits; Reliability engineering; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on

Conference_Location

Cancun

Print_ISBN

0-7803-5766-3

Type

conf

DOI

10.1109/ICCDCS.2000.869840

Filename

869840