On the static performance of the RESURF LDMOSFETS for power ICs

This paper introduces a technology-specific relation for the static performance of high voltage lateral diffused MOSFETs. A similar relation, only dependent on material properties, is available for vertical power devices. Here we show that the static performance of the lateral power devices is influenced by the REduced SURface Field effect. Hence a technology-specific relation between the breakdown voltage and the specific on-resistance is proposed. The relation is not only material dependent but also involves two technology-dependent parameters. The proposed technology-specific static relation is substantiated by 2D numerical simulations, 1D analytical models and experimental results taken from the literature.