Title :
Characterisation of radiation effects on MOSFET using genetic algorithms
Author :
Picos, R. ; Roca, M. ; Calvo, O. ; García-Moreno, E.
Author_Institution :
Dept. of Phys., Balearic Islands Univ., Spain
Abstract :
In this work we propose an application of genetic algorithms to the extraction of model parameters for submicronic MOSFET devices. This application seems to be an effective way to fit transistor models to real measurements. The method is used to characterise the radiation effects on transistors using a UCCM-based model. Results of the fitting process and of the parameter accuracy obtained are given
Keywords :
MOSFET; genetic algorithms; radiation effects; semiconductor device models; semiconductor device reliability; MOSFET; UCCM-based model; fitting process; genetic algorithms; model parameters; parameter accuracy; radiation effects; Circuit simulation; Degradation; Electron traps; Genetic algorithms; Ionizing radiation; MOS devices; MOSFET circuits; Radiation effects; Silicon compounds; Threshold voltage;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869842
