Title :
Measurement of junction temperature in heterojunction bipolar transistors
Author :
Chang, Yang-Hua ; Wu, Ying-Yih
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Touliu, Taiwan
Abstract :
A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of collector current as a function of VBE at only a few substrate temperatures, the junction temperature at different biases can be derived. Results are shown from a multi-finger AlGaAs/GaAs transistor and a single-finger InGaP/GaAs transistor
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor device reliability; temperature measurement; AlGaAs-GaAs; III-V semiconductors; InGaP-GaAs; collector current; heterojunction bipolar transistors; junction temperature measurement; multi-finger transistor; single-finger transistor; Current measurement; Digital video broadcasting; Electrical resistance measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Temperature measurement; Thermal conductivity; Thermal resistance;
Conference_Titel :
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location :
Cancun
Print_ISBN :
0-7803-5766-3
DOI :
10.1109/ICCDCS.2000.869844
