• DocumentCode
    2430166
  • Title

    Measurement of junction temperature in heterojunction bipolar transistors

  • Author

    Chang, Yang-Hua ; Wu, Ying-Yih

  • Author_Institution
    Nat. Yunlin Univ. of Sci. & Technol., Touliu, Taiwan
  • fYear
    2000
  • fDate
    2000
  • Abstract
    A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of collector current as a function of VBE at only a few substrate temperatures, the junction temperature at different biases can be derived. Results are shown from a multi-finger AlGaAs/GaAs transistor and a single-finger InGaP/GaAs transistor
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor device reliability; temperature measurement; AlGaAs-GaAs; III-V semiconductors; InGaP-GaAs; collector current; heterojunction bipolar transistors; junction temperature measurement; multi-finger transistor; single-finger transistor; Current measurement; Digital video broadcasting; Electrical resistance measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Temperature measurement; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
  • Conference_Location
    Cancun
  • Print_ISBN
    0-7803-5766-3
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2000.869844
  • Filename
    869844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2430166