A vertical SiC JFET with a monolithically integrated JBS diode

It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical JFET. The experimental results show that, in the reverse direction, the integrated switch, can conduct current by utilizing both the integrated diode and the JFET channel. This can be utilized to significantly reduce the device conduction loss in power electronic applications.