DocumentCode :
2430200
Title :
Diamond high-temperature power devices
Author :
Umezawa, Hitoshi ; Shikata, Shin-Ichi
Author_Institution :
Diamond Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2009
fDate :
14-18 June 2009
Firstpage :
259
Lastpage :
262
Abstract :
In this paper, the potential and the experimental results of high power Schottky barrier diodes on epitaxial diamond films have been presented. Increase of the Schottky barrier height improves reverse operation limit up to 3.1 MV/cm, which value is higher than the Emax of SiC. The reverse leakage current of the diamond SBDs is kept low as 10-4 A/cm2 at 415 K. Low on-resistance with good metal/diamond stability is also realized at high temperature operation.
Keywords :
Schottky barriers; Schottky diodes; diamond; elemental semiconductors; leakage currents; power semiconductor diodes; semiconductor epitaxial layers; Jk-C; Schottky barrier height; epitaxial diamond films; high power Schottky barrier diodes; metal-diamond stability; reverse leakage current; temperature 415 K; Charge carrier processes; Electric breakdown; Impurities; Leakage current; Material properties; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
ISSN :
1943-653X
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2009.5158051
Filename :
5158051
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2430200
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