Accelerated test for reliability analysis of SiC diodes

The purpose of this work is the analysis of reliable wire bonding schemes for power SiC diodes working at high temperature. The surge current and the power cycling behavior of different wire bonding technologies are analyzed. A dedicated test bench was developed for the surge current and the power cycling reliability tests. It allows an accelerated reliability test, 105 cycles takes just 3 hours. The 10 ms half-sinusoidal current pulse test allows observing the effect of the diode´s self-heating. The power cycling capability was analyzed using a new concept of observing the evolution of the dissipated energy per pulse, whose increase under constant current test pulse indicates the degradation of the device. These tests were helpful for chosen an enhanced bonding technology able to work at T_junctio=300degC.