DocumentCode
243026
Title
High Quantum Efficiency (Al) GaAs Nanowires for Optoelectronic Devices
Author
Mokkapati, S. ; Nian Jiang ; Saxena, D. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2014
fDate
14-16 July 2014
Firstpage
13
Lastpage
14
Abstract
III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.
Keywords
III-V semiconductors; aluminium compounds; nanophotonics; nanowires; optical materials; optoelectronic devices; semiconductor quantum wires; AlGaAs; III-V semiconductor nanowires; high quantum efficiency (Al) GaAs nanowires; optoelectronic device applications; quantum/radiative efficiency; Cavity resonators; Gallium arsenide; III-V semiconductor materials; Nanowires; Optoelectronic devices; Plasmons; Radiative recombination; III-V semiconductor; nanowire; optoelectronic devices; plasmonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location
Montreal, QC
Print_ISBN
978-1-4799-2766-1
Type
conf
DOI
10.1109/SUM.2014.14
Filename
6902962
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