Simulation of internal distribution of microwave noise sources in a short-channel nMOSFET

Author

Obrecht, Michael S. ; Manku, Tajinder ; Elmasry, Mohamed I.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

2000

fDate

2000

Abstract

High frequency excess noise in short-channel MOSFETs is discussed from the point of view of internal device characteristics, such as noise source density and current densities. It is demonstrated that the current density component perpendicular to the interface produces a major portion of the high frequency (diffusion) noise in short-channel MOSFETs

Keywords

MOSFET; Poisson equation; current density; microwave field effect transistors; semiconductor device models; semiconductor device noise; shot noise; thermal noise; Poisson equation; bipolar diffusion-drift system; diffusion noise; high frequency excess noise; internal device characteristics; internal distribution simulation; microwave noise sources; noise source density; short-channel nMOSFET; transient simulation; vertical current density component; CMOS technology; Circuit noise; Computational modeling; Current density; Design optimization; Electrons; Genetic expression; MOSFET circuits; Radio frequency; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on

Conference_Location

Cancun

Print_ISBN

0-7803-5766-3

Type

conf

DOI

10.1109/ICCDCS.2000.869851

Filename

869851