Title :
Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V
Author :
Tang, K. ; Li, Z. ; Chow, T.P. ; Niiyama, Y. ; Nomura, T. ; Yoshida, S.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We have studied and optimized the breakdown voltage of enhancement-mode n-channel GaN hybrid MOS-HEMTs on sapphire substrate. These MOS-gated transistors, with different Mg doped p-type GaN layer underneath the unintentional doped AlGaN/GaN layer, have breakdown voltage as high as 1300 V using a dielectric isolation (DI) RESURF approach.
Keywords :
III-V semiconductors; MOSFET; gallium compounds; high electron mobility transistors; semiconductor doping; wide band gap semiconductors; AlGaN-GaN:Al2O3; AlGaN/GaN layer; GaN hybrid MOS-HEMT; Mg doping; RESURF; breakdown voltage; dielectric isolation; sapphire substrate; Aluminum gallium nitride; Dielectric devices; Dielectric substrates; Doping; Electrons; Gallium nitride; HEMTs; MODFETs; Physics; Thermal conductivity;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158056
