DocumentCode
2430309
Title
Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V
Author
Tang, K. ; Li, Z. ; Chow, T.P. ; Niiyama, Y. ; Nomura, T. ; Yoshida, S.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2009
fDate
14-18 June 2009
Firstpage
279
Lastpage
282
Abstract
We have studied and optimized the breakdown voltage of enhancement-mode n-channel GaN hybrid MOS-HEMTs on sapphire substrate. These MOS-gated transistors, with different Mg doped p-type GaN layer underneath the unintentional doped AlGaN/GaN layer, have breakdown voltage as high as 1300 V using a dielectric isolation (DI) RESURF approach.
Keywords
III-V semiconductors; MOSFET; gallium compounds; high electron mobility transistors; semiconductor doping; wide band gap semiconductors; AlGaN-GaN:Al2O3; AlGaN/GaN layer; GaN hybrid MOS-HEMT; Mg doping; RESURF; breakdown voltage; dielectric isolation; sapphire substrate; Aluminum gallium nitride; Dielectric devices; Dielectric substrates; Doping; Electrons; Gallium nitride; HEMTs; MODFETs; Physics; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location
Barcelona
ISSN
1943-653X
Print_ISBN
978-1-4244-3525-8
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2009.5158056
Filename
5158056
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