DocumentCode
2430332
Title
An equivalent circuit model for IGBT
Author
Kao, Chia-Hsiung ; Liang, Yat-Chin
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
2000
fDate
2000
Abstract
A new circuit model for the IGBT is developed. This model uses the transmission-line circuit technique and is suitable for circuit simulators. The new circuit model for the IGBT is implemented into widely used SPICE3 and all the simulation results are compared with the results of the TMA MEDICI device simulator
Keywords
Poisson equation; SPICE; equivalent circuits; insulated gate bipolar transistors; semiconductor device models; transmission line theory; 1D approximation; IGBT; Poisson equation; SPICE3; circuit simulators; continuity equations; equivalent circuit model; high-level injection; transmission-line circuit technique; unit cell cross-section; Analytical models; Anodes; Circuit simulation; Doping; Electrons; Equivalent circuits; Insulated gate bipolar transistors; Medical simulation; Threshold voltage; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on
Conference_Location
Cancun
Print_ISBN
0-7803-5766-3
Type
conf
DOI
10.1109/ICCDCS.2000.869852
Filename
869852
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