A novel double-gate Trench Insulated Gate Bipolar transistor with ultra-low on-state voltage

Author

Hsu, Wesley Chih-Wei ; Udrea, Florin ; Chen, Ho-Tai ; Lin, Wei-Chieh

Author_Institution

Eng. Dept., Univ. of Cambridge, Cambridge, UK

fYear

2009

fDate

14-18 June 2009

Firstpage

291

Lastpage

294

Abstract

In this paper, a new Trench Insulated Gate Bipolar Transistor (TIGBT) which features a double-gate (DG) structure is presented. The new DG-TIGBT can enhance the excess carrier density near the emitter side of the IGBTs so that the conductivity modulation in the N- drift region is stronger than that presents in the conventional IGBTs. In addition, these excess holes can be extracted to the emitter via MOS channels during the turn-off transient, so the switching speed and losses of the DG-TIGBT are virtually unaffected by the extra carrier charge. In this work, we have demonstrated a 600-V DG-TIGBT which has an ultra-low on-state voltage and maintains the same turn-off speed as the conventional TIGBT.

Keywords

carrier density; electrical conductivity; insulated gate bipolar transistors; power transistors; DG-TIGBT; MOS channels; carrier charge; carrier density; conductivity modulation; double-gate structure; switching speed; trench insulated gate bipolar transistor; turn-off speed; turn-off transient; ultra-low on-state voltage; voltage 600 V; Cathodes; Charge carrier density; Conductivity; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Plasma density; Power MOSFET; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on

Conference_Location

Barcelona

ISSN

1943-653X

Print_ISBN

978-1-4244-3525-8

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2009.5158059

Filename

5158059