Probe detectors for mapping manufacturing defects

Author

Zanchi, A. ; Zappa, F. ; Ghioni, M. ; Giudice, A. ; Morrison, A.P. ; Sinnis, V.S.

Author_Institution

Politecnico di Milano, Italy

fYear

2000

fDate

2000

Abstract

The process-dependent defectivity of p-n junctions was investigated through the measurement of the avalanche triggering rate of single-photon avalanche diodes used as process probes. A nonlinear dependence of the ignition rate with the area of circular junctions is reported, which can be ascribed to a nonuniform density of the thermal generation centers, due to gettering. This has been verified by means of microscopic inspection and comparison with other available data. Technological hints are finally derived to counteract this nonuniformity

Keywords

avalanche photodiodes; crystal defects; p-n junctions; probes; semiconductor device measurement; semiconductor device reliability; avalanche triggering rate; circular junctions; gettering; ignition rate; manufacturing defects; microscopic inspection; nonlinear dependence; nonuniform density; p-n junctions; probe detectors; process-dependent defectivity; single-photon avalanche diodes; thermal generation centers; Annealing; Avalanche breakdown; Detectors; Diodes; Ignition; Manufacturing; Microelectronics; Nitrogen; P-n junctions; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on

Conference_Location

Cancun

Print_ISBN

0-7803-5766-3

Type

conf

DOI

10.1109/ICCDCS.2000.869855

Filename

869855