DocumentCode :
2430560
Title :
5.5 V zero-channel power MOSFETs with Ron,sp of 1.0 mΩ·mm2 for portable power management applications
Author :
Huang, W. ; Zhu, R. ; Khemka, V. ; Khan, T. ; Fu, Y. ; Cheng, X. ; Hui, P. ; Ger, M.L. ; Rodriquez, P.
Author_Institution :
SMARTMOSTM Technol. Center, Freescale Semicond., Tempe, AZ, USA
fYear :
2009
fDate :
14-18 June 2009
Firstpage :
319
Lastpage :
322
Abstract :
We report on the experimental demonstration of revolutionary 5.5 V zero-channel power MOSFETs with record low specific on-resistance of 1.0 mOmegaldrmm2 and Figure of Merit (RontimesQg) of 8.4 mOmegaldrnC with optimized metal layout. This novel device also shows good Hot Carrier Injection (HCI) immunity.
Keywords :
portable instruments; power MOSFET; hot carrier injection immunity; portable power management applications; voltage 5.5 V; zero-channel power MOSFETs; Batteries; Breakdown voltage; Doping; Energy management; Hot carrier injection; Human computer interaction; Leakage current; MOSFETs; Power generation; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
ISSN :
1943-653X
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2009.5158066
Filename :
5158066
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2430560
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