Title :
Record 2.8mΩ-cm2 1.9kV enhancement-mode SiC VJFETs
Author :
Sheridan, D.C. ; Ritenour, A. ; Bondarenko, V. ; Burks, P. ; Casady, J.B.
Author_Institution :
SemiSouth Labs., Inc., Starkville, MS, USA
Abstract :
Twenty amp normally-off enhancement mode 4H-SiC VJFETs are demonstrated with 1.9 kV avalanche breakdown voltage and a specific on-resistance of 2.8 mOmega-cm2. The VJFETs shown near ideal subthreshold characteristics and maintain enhancement mode functionality to temperatures exceeding 175degC due to the optimized channel design with low DIBL characteristics. The low specific on-resistance enables the VJFET to have low intrinsic capacitances that result in low total switching times of less than 150 ns at 15 A at a Tj = 175degC, and low total switching energies of 97 muJ when switching 12 A at Tj = 25degC. Short circuit performance was also investigated with the VJFET exhibiting a rugged short circuit withstand capability in excess of 700 mus at a VDS = 600 V.
Keywords :
avalanche breakdown; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; SiC; VJFET; avalanche breakdown voltage; current 12 A; current 15 A; enhancement mode functionality; intrinsic capacitances; low DIBL characteristics; optimized channel design; short circuit; temperature 175 degC; temperature 25 degC; voltage 1.9 kV; voltage 600 V; Avalanche breakdown; Bonding; Insulated gate bipolar transistors; Laboratories; MOSFETs; Plasma temperature; Silicon carbide; Switches; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-3525-8
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2009.5158070
