Microwave FET amplifiers

Author

Shipunova, N.V. ; Kruchinin, I.V. ; Zaltsev, B.A. ; Ignal´yev, A.P. ; Tarasov, I.N. ; Sal´nicov, V.F.

Author_Institution

Salut-25, Nihny Novgorod, Russia

fYear

2000

fDate

11-15 Sept. 2000

Firstpage

8

Lastpage

9

Abstract

The results of the development of microwave FET amplifiers are presented. The narrowband low-noise amplifiers have demonstrated the noise figure of 0.8-1.8 dB at gain of 15-30 IB over 15% bandwidth in the frequency range of 0.4-18.0 GHz. The ultrabroadband low-noise amplifiers have achieved the noise figure of 5.0-7.5 dB at gain of 25.0-33.0 dB in the frequency range of 2.0-22.0 GHz. The narrowband medium power amplifiers have demonstrated gain of 18.0-36.0 dB at the noise figure of 8.0 dB with output power of 80.0-100 mW in line mode over 10% bandwidth in the frequency range of 28.0-40.0 GHz.

Keywords

microwave amplifiers; microwave field effect transistors; semiconductor device noise; 0.4 to 18.0 GHz; 15 to 30 dB; 18.0 to 36.0 dB; 2.0 to 22.0 GHz; 25.0 to 33.0 dB; 28.0 to 40.0 GHz; 80.0 to 100 mW; development; gain; line mode; microwave FET amplifiers; narrowband low-noise amplifiers; narrowband medium power amplifiers; noise figure; output power; ultrabroadband low-noise amplifiers; Bandwidth; Frequency; Gain; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; Narrowband; Noise figure; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean

Conference_Location

Crimea, Ukraine

Print_ISBN

966-572-048-1

Type

conf

DOI

10.1109/CRMICO.2000.1255834

Filename

1255834