Title :
A method for automatic extraction of MESFET linear model parameters
Author :
Kistchinsky, A.A. ; Nedejdin, B.B. ; Svistov, E.A. ; Shulga, N.V.
Author_Institution :
FSCRRTI, Moscow, Russia
Abstract :
Presents the results of development of a measuring set for quickly obtaining an FET linear model. S-parameters are measured by HP8720D circuit analyzer. The device control and mathematical processing is carried out automatically using a PC. The measurement results and parameters of transistor model of 311612A-5 type, which have been obtained using the proposed set, are given.
Keywords :
S-parameters; Schottky gate field effect transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; HP8720D circuit analyzer; MESFET; S-parameters; automatic extraction; linear model parameters; mathematical processing; transistor model; Flexible printed circuits; Helium; IEEE catalog; Indium tin oxide; MESFETs; Microwave technology; Organizing; Roentgenium; Virtual colonoscopy;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1255850
