DocumentCode
2431016
Title
A method for automatic extraction of MESFET linear model parameters
Author
Kistchinsky, A.A. ; Nedejdin, B.B. ; Svistov, E.A. ; Shulga, N.V.
Author_Institution
FSCRRTI, Moscow, Russia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
56
Lastpage
58
Abstract
Presents the results of development of a measuring set for quickly obtaining an FET linear model. S-parameters are measured by HP8720D circuit analyzer. The device control and mathematical processing is carried out automatically using a PC. The measurement results and parameters of transistor model of 311612A-5 type, which have been obtained using the proposed set, are given.
Keywords
S-parameters; Schottky gate field effect transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; HP8720D circuit analyzer; MESFET; S-parameters; automatic extraction; linear model parameters; mathematical processing; transistor model; Flexible printed circuits; Helium; IEEE catalog; Indium tin oxide; MESFETs; Microwave technology; Organizing; Roentgenium; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1255850
Filename
1255850
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