Title :
Midwave Barrier Infrared Detector with Quantum Dot Enhancement
Author :
Ting, D.Z. ; Hill, C.J. ; Soibel, A. ; Keo, S.A. ; Mumolo, J.M. ; Gunapala, S.D.
Author_Institution :
Center for Infrared Photodetectors, California Inst. of Technol., Pasadena, CA, USA
Abstract :
Multiple layers of self-assembled InSb quantum dots are inserted into a standard InAsSb/AlAsSb midwave infrared nBn detector to extend the photo-response wavelength range while maintaining excellent dark current performance.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; infrared detectors; optical materials; optical multilayers; self-assembly; semiconductor quantum dots; InAsSb-AlAsSb; dark current performance; midwave barrier infrared detector; multiple layers; photoresponse wavelength range; quantum dot enhancement; self-assembled InSb quantum dots; standard InAsSb/AlAsSb midwave infrared nBn detector; Dark current; Detectors; Infrared detectors; Photodetectors; Quantum dots; Semiconductor diodes; Standards; infrared detector; midwave infrared; nBn; quantum dot;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4799-2766-1
DOI :
10.1109/SUM.2014.43
