DocumentCode
243111
Title
InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm
Author
Sprengel, Stephan ; Andrejew, Alexander ; Veerabathran, Ganpath Kumar ; Federer, Florian ; Boehm, G. ; Grasse, Christian ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
fYear
2014
fDate
14-16 July 2014
Firstpage
79
Lastpage
80
Abstract
We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room temperature emission up to 3.9 μm and lasing up to 2.6 μm could be demonstrated.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; spontaneous emission; GaAsSb-GaInAs; InP; InP-Based Type-II Heterostructure Lasers; W-shaped QW spontaneous room temperature emission; temperature 293 K to 298 K; type-II band alignment; wavelength 2.6 mum; wavelength 3.9 mum; Gas lasers; Laser excitation; Quantum cascade lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location
Montreal, QC
Print_ISBN
978-1-4799-2766-1
Type
conf
DOI
10.1109/SUM.2014.48
Filename
6902996
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